EPROM (Erasable Programmable Read Only Memory) 也是一种以光学方式读写的 ROM。要写入关联 EPROM，其存储单元应保持在相同的初始状态。与 PROM 相比，EPROM 提供降低的存储永久性，因为 EPROM 容易受到辐射和电噪声的影响。在EPROM的构造中，使用了MOS晶体管。
在EEPROM (电可擦除可编程只读存储器)中，电信号用于擦除 EEPROM 的内容。 EEPROM 可以是一种非易失性存储器，尽管能力发生了变化，但仍保留其内容。它存储用于笔记本电脑/计算机 BIOS 的少量信息。它绝对是 PROM 和 EPROM 的替代品。
EPROM 和 EEPROM 的主要区别在于，EPROM 的内容是通过紫外线擦除的。另一方面，EEPROM的内容是通过电信号擦除的。
我们来看看-EPROM和EEPROM的区别：
| S.NO | EPROM | EEPROM |
|---|---|---|
| 1. | In EPROM, UV light is used to erase the EPROM’s content. | In EEPROM, electric signal is used to erase the EEPROM’s contents. |
| 2. | EPROM includes a rock crystal crystal window at the top. | EEPROM area unit wholly sheathed in an opaque plastic case. |
| 3. | Relative size of cell in EPROM is one. | The relative size of cell in EEPROM is 3. |
| 4. | EPROM is modern version of PROM. | EEPROM is the modern version of EPROM. |
| 5. | EPROM is the external programming. | EEPROM is the external programming. |
| 6. | Once EPROM memory is erased then it can be reprogrammed. | EEPROM is also reprogrammed after erasing like EPROM. |
| 7. | The transistor used in EPROM consumes 12.5 volt. | The transistor used in EEPROM consumes 5 volt. |
| 8. | In EPROM, hot electron injection programming technique is used. | In EEPROM, tunnel effect is used as programming technique. |
| 9. | In EPROM, an erasure consumes 15 to 20 minute for erasing contents. | In EEPROM, an erasure consumes 5 millisecond time for erasing contents. |
| 10. | EPROM chip has got to be off from the computer circuit to erase and reprogram the computer’s BIOS. | EEEPROM chip will be erased and reprogrammed within the electrical circuit to erase and reprogram the content of computer’s BIOS. |